Gabaɗaya magana, yana da wahala a guje wa ɗan ƙaramin gazawa a cikin haɓakawa, samarwa da amfani da na'urorin semiconductor. Tare da ci gaba da haɓaka buƙatun ingancin samfur, binciken gazawar yana ƙara zama mai mahimmanci. Ta hanyar nazarin takamaiman guntu gazawar, Zai iya taimaka wa masu zanen da'ira su sami lahani na ƙirar na'urar, rashin daidaituwar sigogin tsari, ƙira mara ma'ana na kewaye kewaye ko rashin aiki da matsalar ta haifar. Wajabcin nazarin gazawar na'urorin semiconductor an fi bayyana shi ta fuskoki masu zuwa:
(1) Binciken gazawa hanya ce mai mahimmanci don tantance tsarin gazawar guntuwar na'urar;
(2) Binciken gazawa yana ba da mahimman tushe da bayanai don ingantaccen ganewar kuskure;
(3) Binciken gazawa yana ba da bayanan da suka dace don injiniyoyin ƙira don ci gaba da haɓakawa ko gyara ƙirar guntu kuma su sa ya fi dacewa daidai da ƙayyadaddun ƙira;
(4) Binciken gazawa na iya samar da ƙarin mahimmanci don gwajin samarwa da samar da mahimman bayanai don inganta tsarin gwajin tabbatarwa.
Don gazawar bincike na semiconductor diodes, audions ko hadedde da'irori, yakamata a gwada sigogin lantarki da farko, kuma bayan duban bayyanar a ƙarƙashin na'urar gani, yakamata a cire marufi. Duk da yake kiyaye amincin aikin guntu, abubuwan ciki da na waje, abubuwan haɗin gwiwa da saman guntu ya kamata a kiyaye su gwargwadon iko, don shirya don mataki na gaba na bincike.
Yin amfani da sikanin microscope na lantarki da bakan makamashi don yin wannan bincike: gami da lura da ƙananan ƙwayoyin halittar jiki, binciken gazawar maki, lura da lahani da wuri, daidaitaccen ma'auni na ƙayyadaddun ma'auni na na'urar da ƙaƙƙarfan yuwuwar rarrabawa da madaidaicin hukunci na da'irar ƙofar dijital (tare da yanayin hoton yanayin ƙarfin lantarki); Yi amfani da spectrometer makamashi ko spectrometer don yin wannan bincike yana da: nazarin abun da ke cikin ƙananan ƙananan, tsarin abu ko bincike mai gurɓatacce.
01. Lalacewar saman da konewar na'urorin semiconductor
Lalacewar saman ƙasa da ƙonewa na na'urorin semiconductor duka nau'ikan gazawar gama gari ne, kamar yadda aka nuna a hoto na 1, wanda shine lahani na tsararren Layer na haɗaɗɗiyar da'ira.
Hoto na 2 yana nuna lahani na saman da'irar da aka yi da ƙarfe.
Hoto na 3 yana nuna tashar rushewar tsakanin sassan ƙarfe biyu na haɗaɗɗun kewaye.
Hoto na 4 yana nuna rugujewar igiyar ƙarfe da skew nakasar akan gadar iska a cikin na'urar microwave.
Hoto na 5 yana nuna ƙarancin grid na bututun microwave.
Hoto na 6 yana nuna lalacewar injina ga haɗaɗɗen waya mai ƙarfe da aka yi da lantarki.
Hoto na 7 yana nuna guntuwar guntu diode na buɗewa da lahani.
Hoto 8 yana nuna rugujewar diode mai karewa a shigarwar da'irar da aka haɗa.
Hoto na 9 yana nuna cewa saman guntun da'ira ya lalace ta hanyar tasirin injina.
Hoto na 10 yana nuna ɓarnar ɓarna na guntuwar da'ira.
Hoto na 11 yana nuna guntuwar diode ta karye kuma ta kone sosai, kuma wuraren da aka rushe sun juya zuwa yanayin narkewa.
Hoto na 12 yana nuna guntun wutar lantarki na gallium nitride microwave ya ƙone, kuma wurin da ya ƙone yana nuna yanayin zubewar zube.
02. Electrostatic lalacewa
Na'urorin Semiconductor daga masana'anta, marufi, sufuri har zuwa kan allon da'ira don sakawa, walda, taron na'ura da sauran matakai suna ƙarƙashin barazanar wutar lantarki. A cikin wannan tsari, sufuri yana lalacewa saboda yawan motsi da kuma sauƙi ga tsayayyen wutar lantarki da duniyar waje ke samarwa. Don haka, ya kamata a ba da kulawa ta musamman ga kariyar lantarki yayin watsawa da sufuri don rage asara.
A cikin semiconductor na'urorin tare da unipolar MOS tube da MOS hadedde kewaye ne musamman m ga a tsaye wutar lantarki, musamman MOS tube, saboda da kansa shigar da juriya ne sosai high, da kuma gate-source electrode capacitance ne sosai kananan, don haka yana da sauqi da za a shafa ta waje electromagnetic filin ko electrostatic shigar da kuma caje, da kuma saboda da electrostatic tsara, yana da wuya a yi cajin shi a lokacin da ake cajin shi a lokacin da wutar lantarki ya haifar da staccum. rushewar na'urar nan take. Siffar fashewar electrostatic ita ce rushewar fasahar fasaha ta lantarki, wato, sikirin oxide Layer na grid ya karye, yana samar da rami, wanda ke rage tazarar da ke tsakanin grid da tushen ko tsakanin grid da magudanar ruwa.
Kuma dangane da MOS tube MOS hadedde kewaye antistatic rushewa ikon ne in mun gwada da dan kadan mafi alhẽri, saboda shigarwa m na MOS hadedde da'irar sanye take da m diode. Da zarar an sami babban ƙarfin lantarki ko ƙara ƙarfin wutar lantarki zuwa mafi yawan diodes masu kariya za a iya jujjuya su zuwa ƙasa, amma idan ƙarfin lantarki ya yi yawa ko kuma ƙararrawar wutar lantarki nan take ya yi girma, wani lokacin diodes masu kariya za su da kansu, kamar yadda aka nuna a hoto na 8.
Hotunan da yawa da aka nuna a cikin adadi13 sune na'urori masu rarraba wutar lantarki na MOS hadedde kewaye. Wurin rushewar ƙarami ne kuma mai zurfi, yana gabatar da yanayin zubewar zube.
Hoto na 14 yana nuna bayyanar fashewar electrostatic na maganadisu na babban faifan kwamfuta.
Lokacin aikawa: Jul-08-2023
